693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ivády, Viktor
Linköping University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024High-field/high-frequency electron spin resonances of Fe-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math> by terahertz generalized ellipsometry: Monoclinic symmetry effectscitations
- 2024High-field/high-frequency electron spin resonances of Fe-doped β-Ga2 O3 by terahertz generalized ellipsometry : Monoclinic symmetry effectscitations
- 2023Isotope-Purification-Induced Reduction of Spin-Relaxation and Spin-Coherence Times in Semiconductorscitations
- 2023Symmetric carbon tetramers forming spin qubits in hexagonal boron nitridecitations
- 2021Dipolar spin relaxation of divacancy qubits in silicon carbidecitations
- 2020Stone–Wales defects in hexagonal boron nitride as ultraviolet emitterscitations
- 2020Stone-Wales defects in hexagonal boron nitride as ultraviolet emitterscitations
- 2019Stabilization of point-defect spin qubits by quantum wellscitations
- 2018First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H-SiCcitations
- 2018First principles calculation of spin-related quantities for point defect qubit researchcitations
- 2017Hybrid-DFT + V-w method for band structure calculation of semiconducting transition metal compounds: the case of cerium dioxidecitations
- 2016Development of theoretical approaches for post-silicon information processing
- 2016First Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiCcitations
- 2015Theoretical model of dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbidecitations
- 2014Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiCcitations
- 2013Role of screening in the density functional applied to transition-metal defects in semiconductorscitations
Places of action
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article
Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC
Abstract
<jats:p>Well addressable and controllable point defects in device friendly semiconductors are desired for quantum computational and quantum informational processes. Recently, such defect, an ultra-bright single photon emitter, the antisite carbon carbon vacancy pair, was experimentally investigated in 4H-SiC. In our theoretical work, based on<jats:italic>ab initio</jats:italic>calculation and group theory analysis, we provide a deeper understanding of the features of the electronic structures and the luminescence process of this defect.</jats:p>