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| Naji, M. |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Brault, J.
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Topics
Publications (3/3 displayed)
- 2020Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor depositioncitations
- 2020Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor depositioncitations
- 2012"Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process"
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article
"Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process"
Abstract
MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were compared in terms of resulting effective charge and interface trap density. A good SiO2/GaN interface quality was achieved for N-type MOS capacitances obtained both with continuous ICP PECVD and ECR-PECVD deposition of the SiO2 dielectric. However, the interface quality is greatly reduced for MOS capacitors fabricated on P-type GaN.