| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pimentel, Ana
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2022Enhanced Fe-TiO2 Solar Photocatalysts on Porous Platforms for Water Purificationcitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Tailoring Upconversion and Morphology of Yb/Eu Doped Y2O3 Nanostructures by Acid Composition Mediationcitations
- 2016Photocatalytic behavior of TiO2 films synthesized by microwave irradiationcitations
- 2015Morphological and optical characterization of transparent thin films obtained at low temperature using ZnO nanoparticles
- 2010Manganese nitrate impregnation cycles optimization by addition of surfactants on Ta capacitors with high charge powders (>80000μC/G) manufacturing
- 2009Zinc oxide, a multifunctional material: from material to device applicationscitations
- 2008Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperaturecitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
- 2006Electron transport and optical characteristics in amorphous indium zinc oxide filmscitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2005A Study on the Electrical Properties of ZnO Based Transparent TFTscitations
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article
A Study on the Electrical Properties of ZnO Based Transparent TFTs
Abstract
The purpose of this work is to present in-depth electrical characterization on transparent TFTs, using zinc oxide produced at room temperature as the semiconductor material. Some of the studied aspects were the relation between the output conductance in the post-pinch-off regime and width-to-length ratios, the gate leakage current, the semiconductor/insulator interface traps density and its relation with threshold voltage. The main point of the analysis was focused on channel mobility. Values extracted using different methodologies, like effective, saturation and average mobility, are presented and discussed regarding their significance and validity. The evolution of the different types of mobility with the applied gate voltage was investigated and the obtained results are somehow in disagreement with the typical behavior found on classical silicon based MOSFETs, which is mainly attributed to the completely different structures of the semiconductor materials used in the two situations: while in MOSFETS we have monocrystalline silicon, our transparent TFTs use poly/nanocrystalline zinc oxide with grain sizes of about 10 nm.