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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Raniero, Leandro
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2008Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputteringcitations
- 2008Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applicationscitations
- 2007Amorphous/nanocrystalline silicon biosensor for the specific identification of unamplified nucleic acid sequences using gold nanoparticle probescitations
- 2006Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devicescitations
- 2006Characterization of nanocrystalline silicon carbide filmscitations
- 2006Electrical properties of amorphous and nanocrystalline hydrogenated silicon films obtained by impedance spectroscopycitations
- 2006Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cellscitations
- 2005Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHzcitations
- 2005Study of a-SiC : H buffer layer on nc-Si/a-Si : H solar cells deposited by PECVD technique.citations
- 2004Characterization of silicon carbide thin films prepared by VHF-PECVD technologycitations
Places of action
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article
Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices
Abstract
In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.