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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Fernandes, Jra
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Topics
Publications (12/12 displayed)
- 2017The role of PbTiO3 layers in piezoelectric multilayer composite films based on Pb(Mg1/3Nb2/3)O-3-PbTiO3citations
- 2017Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin filmscitations
- 2015Fracture behaviour of wood bonded joints under modes i and II by digital image correlation and fibre Bragg grating sensorscitations
- 2014Morphotropic Phase Boundary in Solution- Derived ( Bi0.5Na0.5) 1-xBaxTiO3 Thin Films: Part II Functional Properties and Phase Stabilitycitations
- 2013Room temperature structure and multiferroic properties in Bi0.7La0.3FeO3 ceramicscitations
- 2012Properties of multilayer composite thin films based on morphotropic phase boundary Pb(Mg1/3Nb2/3)O-3-PbTiO3citations
- 2006Optimization of the fabrication parameters of PZT 52/48 thin films by pulsed laser ablationcitations
- 2005Bottom electrode crystallization of Pb(Zr, Ti)O-3 thin films made by RF magnetron sputteringcitations
- 2003Barium metaplumbate thin film electrodes for ferroelectric devicescitations
- 2003Simple method for crystallizing ceramic thin films using platinum bottom electrodes as resistive heating elementscitations
- 2003Pulsed laser deposition of barium metaplumbate thin films for ferroelectric capacitorscitations
- 2002Interactions at zirconia-Au-Ti interfaces at high temperaturescitations
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article
Optimization of the fabrication parameters of PZT 52/48 thin films by pulsed laser ablation
Abstract
Thin films of PbZr0.52Ti0.48O3 (PZT) for applications in piezoelectric actuators were deposited by the pulsed laser deposition technique (PLD) over Pt/Ti/SiO2/Si substrates. The effect of different electrode and PZT deposition and processing conditions on the ferroelectric and piezoelectric properties of the devices was investigated. X-Ray diffraction results showed that the deposition temperature for the electrodes had a strong influence on the PZT orientation; the increase in the electrode deposition temperature changes the PZT orientation from random or (111) to (001) depending also on PZT deposition pressure. From scanning electron microscope (SEM) pictures one could also observe that the deposition pressure affects the porosity of the PZT films, which increases with the pressure above 1 x 10(-1) mbar for films deposited at room temperature. The measurement of the ferroelectric hysteresis curves confirmed that the structural changes induced by different processing parameters affected the ferroelectric properties of the material. The best ferroelectric properties including fatigue endurance were obtained for electrodes made at high temperature and for PZT deposited at 2 x 10(-2) mbar and heat treated at 675 degrees C for 30 minutes in an oxygen atmosphere. The piezoelectric coefficient d(33), measured using a Michelson interferometer, had values in the range between 20 and 60 pm/V, and showed a strong dependence on the thickness of the PZT films.