| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Karbalaei Akbari, Mohammad
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Plasma-modulated supercapacitive-coupled memristive behavior of two-dimensional gallium oxide channels towards the realization of tunable semiconductor–metal nanoelectronic gatescitations
- 2024Exploring heterointerface characteristics and charge-storage dynamics in ALD-developed ultra-thin TiO2-In2O3/Au heterojunctions
- 2023Atomic layer deposition of ultra-thin crystalline electron channels for heterointerface polarization at two-dimensional metal-semiconductor heterojunctionscitations
- 2023Two-dimensional SnO2-ZnO nanohybrid electrode fabricated via atomic layer deposition for electrochemical supercapacitorscitations
- 2022Plasma-enhanced elemental enrichment of liquid metal interfaces : towards realization of GaS nanodomains in two-dimensional Ga2O3citations
- 2021Atomic layer deposition : state-of-the-art approach to nanoscale hetero-interfacial engineering of chemical sensors electrodes : a reviewcitations
- 20212D semiconductor nanomaterials and heterostructures : controlled synthesis and functional applicationscitations
- 2021Optoelectronic nociceptive sensors based on heterostructured semiconductor filmscitations
- 2020Nano-engineering and functionalization of hybrid Au-MexOy-TiO2 (Me = W, Ga) hetero-interfaces for optoelectronic receptors and nociceptorscitations
- 2019Electrochromic photodetectors : toward smarter glasses and nano reflective displays via an electrolytic mechanismcitations
- 2018P1NM.2 - Electrochemical hydrazine sensor based on atomically-thin sub-nanometer WO3 developed by atomic layer deposition
- 2018ALD-developed plasmonic two-dimensional Au-WO3-TiO2 heterojunction architectonics for design of photovoltaic devicescitations
- 2018P1NM.1 - Wafer-scale two-dimensional ALD-developed α-MoO3 for ultra-sensitive, stable and selective hydrogen peroxide sensing
- 2017Nano TiB2 and TiO2 reinforced composites : a comparative investigation on strengthening mechanisms and predicting mechanical properties via neural network modelingcitations
- 2017Al-TiB 2 micro/nanocomposites : particle capture investigations, strengthening mechanisms and mathematical modelling of mechanical propertiescitations
- 2017Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunitiescitations
Places of action
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article
Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities
Abstract
<jats:p>Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise ultra-thin two-dimensional (2D) nanostructures. ALD provides digital thickness control to the atomic level by depositing film one atomic layer at a time, as well as pinhole-free films even across large and complex areas. The technique’s capabilities are presented on the example of ALD-developed ultra-thin 2D tungsten oxide (WO3) over the large area of standard 4” Si substrates. The discussed advantages of ALD enable and endorse the employment of this technique for the development of hetero-nanostructure 2D semiconductors with unique properties.</jats:p>