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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Texier, Michael
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Publications (7/7 displayed)
- 2024Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mappingcitations
- 2024Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mappingcitations
- 2018Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe
- 2017Piezoelectric response and electrical properties of Pb(Zr 1-x Ti x )O 3 thin films: The role of imprint and compositioncitations
- 2013Evidence of perfect dislocation glide in nanoindented 4H-SiCcitations
- 2009Defects created in N-doped 4H-SiC by flexion in the brittle regime: Stacking fault multiplicity and dislocation cores.citations
- 2007Al-Pd-Mn icosahedral quasicrystal: deformation mechanisms in the brittle domain.citations
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article
Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe
Abstract
International audience ; Atomic redistribution of W and Fe in Si were studied using secondary ion mass spectrometry and transmission electron microscopy. W diffusion experiments performed during isothermal annealing and during Si oxidation show that W atoms should use at least two different diffusion mechanisms. Experimental diffusion profiles can be well simulated by considering the simultaneous use of three different W diffusion mechanisms: the dissociative and the kick-out mechanisms, as well as an original mechanism based on the formation of a W-Si self-interstitial pair located on the interstitial Si sub-lattice. Fe redistribution was studied during the oxidation of a Fe-contaminated Si wafer. Fe is shown to be first pushed-out in Si by the mobile SiO 2 /Si interface, and thus to form Fe silicides at this interface. The silicide precipitates, which can exhibit a core-shell structure, appear to move with the SiO 2 /Si interface thanks to an oxidation/dissolution mechanism in the SiO 2 and a nucleation/growth mechanism in the Si matrix. Furthermore, the rate difference between Si and Fe silicide precipitate oxidation leads to the formation of Si pyramidal defects at the SiO 2 /Si interface.