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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Núñez-Velázquez, Martin Miguel Angel
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2022Temperature dependent characteristics of L-band EDFA using phosphorus- and High Aluminum- Co-doped Silica Fiberscitations
- 2022Temperature-dependent study on L-band EDFA characteristics pumped at 980nm and 1480nm in phosphorus and aluminum-rich erbium-doped silica fiberscitations
- 2020Enhancement of nonlinear functionality of step-index silica fibers combining thermal poling and 2D materials depositioncitations
- 2020Development of Tm:Ho co-doped silica fiber for high-power operation at 2.1μm
- 2020Optical fibers fabricated from 3D printed silica preformscitations
- 2020Study on the dopant concentration ratio in thulium-holmium doped silica fibers for lasing at 2.1µmcitations
- 2020Efficient cladding pump Tmcitations
- 2019Pulsed Yb-doped phospho-silicate fiber MOPA source with 25kW peak power and excellent beam quality
- 2019Impact of the electrical configuration on the thermal poling of optical fibres with embedded electrodes: Theory and experiments
- 2019Impact of the electrical configuration on the thermal poling of optical fibres with embedded electrodes: Theory and experiments
- 2018Additive manufacturing towards fabrication of next generation of optical fibres
- 2018Speciality optical fibre fabricated by outside vapour deposition process
- 2015Highly efficient Yb-free Er-La-Al doped ultra low NA large mode area single-trench fiber lasercitations
- 2014Thermally-stimulated emission analysis of bismuth-doped silica fiberscitations
- 2014Characterization of fluorescence lifetime of Tm-doped fibers with increased quantum conversion efficiencycitations
- 2014Investigations into the growth of GaN nanowires by MOCVD using azidotrimethylsilane as nitrogen source
- 2014Extending single mode performance of all-solid large-mode-area single trench fibercitations
Places of action
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article
Investigations into the growth of GaN nanowires by MOCVD using azidotrimethylsilane as nitrogen source
Abstract
Gallium trichloride (GaCl<sub>3</sub>) and azidotrimethylsilane (CH<sub>3</sub>)<sub>3</sub>SiN<sub>3</sub> were employed as alternatives gallium and nitrogen precursors respectively in the growth of GaN nanowires via a metal-organic chemical vapor deposition (MOCVD) system. Au pre-deposition on Si (100) substrate was using as catalysis seed to grown of GaN nanowires. X-Ray, FE-SEM and AFM analyses reveal that nanowires grown at temperature 1050 ºC present morphology characteristic to model VLS. Scanning electron microscopy reveal a surface morphology made up of wurzite that suggests that wires growth involve a melting process. A nucleation and growth mechanism, involving the congruent melting clusters of precursor molecules on the hot substrate surface, is therefore invoked to explain these observations. We attributed the improved growth behavior to the nearer-to-equilibrium growth and may be close to local thermodynamic equilibrium.