| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Buttay, Cyril
Claude Bernard University Lyon 1
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2022Design of a test package for high voltage SiC diodes
- 2022Optical Detection of Partial Discharges Under Fast Rising Square Voltages in Dielectric Liquidscitations
- 2017Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductorscitations
- 2017High temperature ageing of microelectronics assemblies with SAC solder jointscitations
- 2017Robustness of SiC MOSFET under avalanche conditionscitations
- 2016Sintered-Silver Bonding of High-Temperature Piezoelectric Ceramic Sensorscitations
- 2015Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Testcitations
- 2014Design and Manufacturing of a Double-Side Cooled, SiC based, High Temperature Inverter Leg
- 2013Study of die attach technologies for high temperature power electronics: Silver sintering and gold-germanium alloycitations
- 2013High Temperature Operation of SiC Converters
- 2013Full densification of molybdenum powders and multilayer materials obtained by Spark Plasma Sintering
- 2013Die attach using silver sintering. Practical implementation and analysiscitations
- 2012Full densification of Molybdenum powders using Spark Plasma Sinteringcitations
- 2012Elaboration of Architectured Materials by Spark Plasma Sinteringcitations
- 2012Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applicationscitations
- 20123-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules
- 2011Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization
- 2011Elaboration of Architectured Materials by Spark Plasma Sinteringcitations
- 2011Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substratescitations
Places of action
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article
Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates
Abstract
This paper presents the design, fabrication, and characterization of micro planar inductors on a microwave magnetic material (YIG). Planar spiral inductors were designed for monolithic DC-DC converters in System-In-Package with 100 MHz switching frequency (1 W, Vin=3.6 V, Vout=1 V). System-In-Package applications are facing miniaturization issues due to passive components size. In this frequency range, the size of filter passive components can be reduced dramatically. Thus, the passive area of integration is in the 10 mm2 range. A microwave magnetic substrate (YIG) serves as mechanical support and also presents a double purpose by increasing inductance value and reducing electromagnetic perturbations. This last point seems to be a critical point to improve the good behavior of a switching mode power supply. In order to obtain the optimal design for the inductor, geometrical parameters were studied using Flux2D simulator. A specific Merit factor taking into consideration inductance value at 100MHz, DC resistance and footprint was proposed to compare different inductor structures. An optimized 50 nH spiral inductor with expected 50 mΩ RDC, 3 mm2 surface area was designed. Simulation conditions and results will be described in the full paper. Micro inductors occupying 3mm2 surface area were fabricated by electroplating technique. Fabrication process involves seed layer deposition on YIG, lamination of dry film photoresist and electroplating to mould the resist patterns. Process fabrication will be detailed in the full paper. Figure 1 shows SEM image of the fabricated inductor. Afterwards, samples were tested using a vector network analyzer in the 10 MHz to 100 MHz range. Results were then compared to the predicted response of simulated equivalent model.