| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pezoldt, Jörg
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Phase formation of cubic silicon carbide from reactive silicon-carbon multilayerscitations
- 2023Evaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiCcitations
- 2022Formation and Characterization of Three-Dimensional Tetrahedral MoS2 Thin Films by Chemical Vapor Depositioncitations
- 2022Characterization of pores in polished low temperature co-fired glass-ceramic composites for optimization of their micromachiningcitations
- 2022Self-aligning metallic vertical interconnect access formation through microlensing gas phase electrodeposition controlling airgap and morphologycitations
- 2022Size dependent properties of reactive materialscitations
- 2021Chemoheteroepitaxy of 3C-SiC(111) on Si(111): influence of predeposited Ge on structure and compositioncitations
- 2020Structural Analysis of Sputtered Sc(x)Al(1-x)N Layers for Sensor Applicationscitations
- 2018Magnetron sputtered AlN layers on LTCC multilayer and silicon substratescitations
- 2016Deformable printed circuit boards that enable metamorphic electronicscitations
- 2015Approaching gas phase electrodeposition: process and optimization to enable the self-aligned growth of 3D nanobridge-based interconnectscitations
Places of action
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article
Evaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiC
Abstract
<jats:p>Hysteresis response of epitaxially grown graphene nanoribbons devices on semi-insulating 4H-SiC in the armchair and zigzag directions is evaluated and studied. The influence of the orientation of fabrication and dimensions of graphene nanoribbons on the hysteresis effect reveals the metallic and semiconducting nature graphene nanoribbons. The hysteresis response of armchair based graphene nanoribbon side gate and top gated devices implies the influence of gate field electric strength and the contribution of surface traps, adsorbents, and initial defects on graphene as the primary sources of hysteresis. Additionally, passivation with AlO<jats:sub>x</jats:sub> and top gate modulation decreased the hysteresis and improved the current-voltage characteristics.</jats:p>