| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Alquier, Daniel
Université de Tours
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Understanding Interfaces in AlScN/GaN Heterostructurescitations
- 2024Understanding interfaces in AlScN/GaN heterostructurescitations
- 2023Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substratecitations
- 2022Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiCcitations
- 2019Deposition Time and Annealing Effects of ZnO Seed Layer on Enhancing Vertical Alignment of Piezoelectric ZnO Nanowirescitations
- 2019Deposition Time and Annealing Effects of ZnO Seed Layer on Enhancing Vertical Alignment of Piezoelectric ZnO Nanowirescitations
- 2019Laser Annealing Simulations of Metallisations Deposited on 4H-SiCcitations
- 2019Challenges of low-temperature synthesized ZnO nanostructures and their integration into nano-systemscitations
- 2019Challenges of low-temperature synthesized ZnO nanowires and their integration into nanogenerators
- 2019Annealing and Thickness Effects of ZnO Seed Layer on Improving Alignment of ZnO NWs for Piezoelectric Nanogenerator Application
- 2018Organic/Inorganic Hybrid Stretchable Piezoelectric Nanogenerators for Self-Powered Wearable Electronicscitations
- 2018Organic/Inorganic Hybrid Stretchable Piezoelectric Nanogenerators for Self‐Powered Wearable Electronicscitations
- 2018Challenges of low-temperature synthesized ZnO nanostructures and their integration into nano-systemscitations
- 2017Zinc oxide nanowire-parylene nanocomposite based stretchable piezoelectric nanogenerators for self-powered wearable electronicscitations
- 2017Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layercitations
- 2017Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stabilitycitations
- 2015Surface State of GaN after Rapid-Thermal-Annealing Using AlN Cap-Layercitations
- 2012Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substratescitations
- 2012Recent Progresses in GaN Power Rectifiercitations
- 2009Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifierscitations
Places of action
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article
Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC
Abstract
<jats:p>This work is focused on the fabrication of Titanium-based ohmic contacts by Laser Thermal Annealing (LTA) on n-type silicon carbide (4H-SiC). Their morphologies and electrical properties were studied by using two sets of parameters impacting the laser pulse overlap. With both sets, the ohmic contact transition was reached. The high overlap conditions produced a massive degradation of the contact morphology by leaving uncovered SiC. An optimisation of the annealing parameters was successfully performed by reducing the overlap. With the low overlap configuration, a specific contact resistance of 1.2×10<jats:sup>-4</jats:sup> Ω.cm<jats:sup>2</jats:sup> was measured for a fluence of 4.25 J.cm<jats:sup>-2</jats:sup> with a satisfying contact surface morphology.</jats:p>