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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Berger, Clément
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Topics
Publications (5/5 displayed)
- 2024A metamodel for confined yield stress flows and parameters’ estimation
- 2022Tuning Physical Properties of NiFe2O4 and NiFe2O4@SiO2 Nanoferrites by Thermal Treatmentcitations
- 2022Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiCcitations
- 2019Microstructural and magnetic characterization of Ni0.5Zn0.5Fe2O4 ferrite nanoparticlescitations
- 2016The Nanoflower-Like Morphology and Magnetism of As-Milled Ho(Ni<sub>0.8</sub>Co<sub>0.2</sub>)<sub>3</sub> Powders Prepared by HEBMcitations
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article
Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC
Abstract
<jats:p>This work is focused on the fabrication of Titanium-based ohmic contacts by Laser Thermal Annealing (LTA) on n-type silicon carbide (4H-SiC). Their morphologies and electrical properties were studied by using two sets of parameters impacting the laser pulse overlap. With both sets, the ohmic contact transition was reached. The high overlap conditions produced a massive degradation of the contact morphology by leaving uncovered SiC. An optimisation of the annealing parameters was successfully performed by reducing the overlap. With the low overlap configuration, a specific contact resistance of 1.2×10<jats:sup>-4</jats:sup> Ω.cm<jats:sup>2</jats:sup> was measured for a fluence of 4.25 J.cm<jats:sup>-2</jats:sup> with a satisfying contact surface morphology.</jats:p>