| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Rommel, Mathias
Fraunhofer Institute for Integrated Systems and Device Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Novel Rapid and Deposition-Free Strategy for FIB Cross-Section Preparation
- 2022Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiCcitations
- 2020Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopycitations
- 2020Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiCcitations
- 2018Defects and carrier lifetime in 4H-Silicon Carbide ; Defects and carrier lifetime in 4H-SiC
- 2018One-step nanoimprinted Bragg grating sensor based on hybrid polymerscitations
- 2018Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopycitations
- 2015Improvement of 4H-SiC material quality
- 2015Junction formation and current transport mechanisms in hybrid n-Si/PEDOT:PSS solar cells
- 2014NanoSPV - SPM Technique for Measuring Minority Charge Carrier Diffusion Lengths with High Spatial Resolution
- 2014Optical polymers with tunable refractive index for nanoimprint technologiescitations
- 2013Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabricationcitations
- 2010Full wafer microlens replication by UV imprint lithographycitations
Places of action
| Organizations | Location | People |
|---|
article
Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC
Abstract
<jats:p>P-type Ti/Al-based contact vias of different sizes but identical processing were electrically characterized using linear transfer length method (TLM) patterns and metal-oxide-semiconductor (MOS) transistors. While the TLM patterns and MOS transistors with large vias follow ohmic contact behavior, Schottky contact properties were observed for smaller contact via dimensions. Focused ion beam (FIB) analysis of the contact vias verified the presence of Ti<jats:sub>3</jats:sub>SiC<jats:sub>2</jats:sub> on large 66 μm x 25 μm contact vias and its absence on smaller 16 μm x 3 μm ones, correlating its absence with the electrical Schottky properties.</jats:p>