• Sharma, Abhishek
• Sharma, Vikas
• Kumar, Ajay
• Choudhary, Sumitra

Abstract

<jats:p>In this work, ZnO single layer thin film of 100 nm is deposited on a Si substrate using RF magnetron sputtering. Base pressure of 1.0×10−5 mbar, RF power of 100W at Ar flow 15 sccm and room temperature were process parameters. The average crystallite size of ZnO layer, deposited on Si substrate, using Scherrer's formula was 108.16 nm. XRD verifies the crystalline nature of ZnO with various peaks at (002), (101) and (103) planes. Using AFM technique, ZnO had an Average Surface Roughness (Ra) of 2.75 nm and RMS roughness (Rq) of 3.70 nm. From Hall measurements at room temperature, the authors determined that ZnO is a n-type semiconductor having a resistivity of 1 to 100 Ωcm. The layer's sheet resistance was 7.05×103 Ω/sq, and its resistivity was 7.05×10−2 Ωcm. The Raman spectra analysis confirmed the presence of Raman active modes in the sample, confirming the existence of certain vibrational modes. In PL spectra, an emission peak was observed at 380.30 nm, which closely resembled pure ZnO. These results collectively shows that the ZnO/Si thin films grown on Si demonstrated excellent quality.</jats:p>

Topics

• impedance spectroscopy
• surface
• resistivity
• x-ray diffraction
• thin film
• atomic force microscopy
• zinc
• Silicon
• n-type semiconductor