| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Niaura, Gediminas
Center for Physical Sciences and Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Investigation of Hydrogen and Oxygen Evolution on Cobalt-Nanoparticles-Supported Graphitic Carbon Nitridecitations
- 2023Black Liquor and Wood Char-Derived Nitrogen-Doped Carbon Materials for Supercapacitorscitations
- 2022Wet Synthesis of Graphene-Polypyrrole Nanocomposites via Graphite Intercalation Compoundscitations
- 2022Design and Characterization of Nanostructured Titanium Monoxide Films Decorated with Polyaniline Speciescitations
- 2022Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphenecitations
- 2022Structural Control and Electrical Behavior of Thermally Reduced Graphene Oxide Samples Assisted with Malonic Acid and Phosphorus Pentoxidecitations
- 2022Synthesis and Characterization of Graphite Intercalation Compounds with Sulfuric Acidcitations
- 2022The direct growth of planar and vertical graphene on Si(100) <i>via</i> microwave plasma chemical vapor deposition: synthesis conditions effectscitations
- 2018Wood-Based Carbon Materials Modified with Cobalt Nanoparticles As Catalysts for Oxygen Reduction and Hydrogen Oxidation
- 2017AlAs as a Bi blocking barrier in GaAsBi multi-quantum wells: Structural analysiscitations
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article
AlAs as a Bi blocking barrier in GaAsBi multi-quantum wells: Structural analysis
Abstract
<jats:p>Crystallographic properties of AlAs barriers in GaAsBi-based multi-quantum well structures grown on GaAs substrates by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) were studied. The quantum wells were grown at temperatures ranging from 160 to 350 °C. The width of GaAsBi quantum wells varied from 4 to 20 nm. The optimization of technological parameters for the growth of high crystalline quality AlAs barriers at low temperatures was performed. To explore the impact of high temperature treatment on crystal quality, surface roughness and chemical composition stability, <jats:italic>ex situ</jats:italic> rapid thermal annealing was performed at 650–750 °C for 180 s in nitrogen ambiance. The structural quality of AlAs barriers, the morphology and sharpness of the interfaces between GaAsBi quantum wells and AlAs barriers were studied by high resolution X-ray diffraction, atomic force microscopy and high resolution transmission electron microscopy, respectively. In this study it was demonstrated that MEE allows one to achieve higher crystal quality of AlAs barriers at much lower temperatures in comparison to MBE. The blocking of Bi out-diffusion from the GaAsBi quantum wells toward the surface was shown for both MBE and MEE grown AlAs barriers.</jats:p>