• Droopad, Ravi
• Mia, Md Dalim
• Fox, Zach
• Saha, Rony
• Samuels, Brian C.

Abstract

<jats:p xml:lang="fr">&lt;abstract&gt;&lt;p&gt;Ferroelectricity is demonstrated for the first time in Si(100)/SiO&lt;sub&gt;2&lt;/sub&gt;/TiN/HfO&lt;sub&gt;2&lt;/sub&gt;-ZrO&lt;sub&gt;2&lt;/sub&gt;/TiN stack using pulsed laser deposition (PLD) and the effects of temperatures, partial oxygen pressures, and thickness for the stabilization of the ferroelectric phase were mapped. Thin films deposited at a higher temperature and a higher oxygen partial pressure have a higher thickness, demonstrating a better ferroelectric response with ~12 μC/cm&lt;sup&gt;2&lt;/sup&gt; remnant polarization, a leakage current of 10&lt;sup&gt;−7&lt;/sup&gt; A (at 8 V) and endurance &amp;gt; 10&lt;sup&gt;11&lt;/sup&gt; cycles indicative of an orthorhombic crystal phase. In contrast, thin films deposited at lower temperatures and pressures does not exhibit ferroelectric behavior. These films can be attributed to having a dominant monoclinic phase, having lower grain size and increased leakage current. Finally, the effects of ZrO&lt;sub&gt;2&lt;/sub&gt; as top and bottom layer were also investigated which showed that ZrO&lt;sub&gt;2&lt;/sub&gt; as the top layer provided better mechanical confinement for stabilizing the orthorhombic phase instead of as the bottom layer.&lt;/p&gt;&lt;/abstract&gt;</jats:p>

Topics

• impedance spectroscopy
• grain
• grain size
• phase
• thin film
• Oxygen
• tin
• pulsed laser deposition