Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (3/3 displayed)

  • 2017ultrathin wafer scale hexagonal boron nitride on dielectric surfaces by diffusion and segregation mechanism33citations
  • 2015뜬 마이크로 디바이스를 이용한 Ge-SixGe1-x Core-Shell Nanowires의 열전도율 측정2citations
  • 2014oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms14citations

Places of action

Chart of shared publication
Banerjee, Sanjay K.
2 / 6 shared
Dolocan, Andrei
1 / 5 shared
Sonde, Sushant Sudam
2 / 6 shared
Colombo, Luigi
1 / 12 shared
Corbet, Chris M.
2 / 2 shared
Lu, Ning
1 / 2 shared
Kim, Moon J.
1 / 1 shared
Seol, Jae Hun
1 / 5 shared
Nah, Junghyo
1 / 3 shared
Park, Hyunjoon
1 / 1 shared
Mcclellan, Connor J.
1 / 3 shared
Kim, Kyounghwan
1 / 1 shared
Chart of publication period
2017
2015
2014

Co-Authors (by relevance)

  • Banerjee, Sanjay K.
  • Dolocan, Andrei
  • Sonde, Sushant Sudam
  • Colombo, Luigi
  • Corbet, Chris M.
  • Lu, Ning
  • Kim, Moon J.
  • Seol, Jae Hun
  • Nah, Junghyo
  • Park, Hyunjoon
  • Mcclellan, Connor J.
  • Kim, Kyounghwan
OrganizationsLocationPeople

article

뜬 마이크로 디바이스를 이용한 Ge-SixGe1-x Core-Shell Nanowires의 열전도율 측정

  • Seol, Jae Hun
  • Nah, Junghyo
  • Park, Hyunjoon
  • Tutuc, Emanuel
Abstract

Theoretical calculations suggest that the thermoelectric figure of merit (ZT) can be improved by introducing a core-shell heterostructure to a semiconductor nanowire because of the reduced thermal conductivity of the nanowire. To experimentally verify the decrease in thermal conductivity in core-shell nanowires, the thermal conductivity of Ge-SixGe1-x core-shell nanowires grown by chemical vapor deposition (CVD) was measured using suspended microdevices. The silicon composition (Xsi) in the shells was measured to be about 0.65, and the remainder of the germanium in the shells was shown to play a role in decreasing defects originating from the lattice mismatch between the cores and shells. In addition to the standard four-point current- voltage (I-V) measurement, the measurement configuration based on the Wheatstone bridge was attempted to enhance the measurement sensitivity. The measured thermal conductivity values are in the range of 9- 13 W/mK at room temperature and are lower by approximately 30 than that of a germanium nanowire with a comparable diameter. © 2015 The Korean Society of Mechanical Engineers.

Topics
  • semiconductor
  • Silicon
  • defect
  • thermal conductivity
  • chemical vapor deposition
  • Germanium