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Kwon, Woong
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article
Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process
Abstract
<jats:title>Abstract</jats:title><jats:p>In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal diffusion anneal process increases the effective barrier height at the metal/Ga-polar GaN Schottky interface. Thus, GaN Camel diodes having improved barrier height and turn-on voltage compared to regular GaN Schottky barrier diodes were realized for the first time. Temperature dependent current-voltage characteristics indicated a near-homogeneous and near-ideal behavior of the GaN Camel diode. The analysis performed in this work is thought to be promising for improving the performance of future GaN based unipolar diodes.</jats:p>