• Miyaguchi, Yusuke
• Sumita, Kyoko
• Asanuma, Shutaro
• Jimbo, Takehito
• Masuda, Takeshi
• Horita, Kazumasa

Abstract

<jats:title>Abstract</jats:title><jats:p>We fabricated Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/SiO<jats:sub>2</jats:sub> stack structures with atomically thin Ti oxide layers at the interfaces using atomic layer deposition and investigated the capacitance–voltage (<jats:italic>C</jats:italic>–<jats:italic>V</jats:italic>) hysteresis of the metal-oxide-semiconductor (MOS) capacitors. We studied the effect of post-deposition annealing in the temperature range of 150 °C−500 °C on the <jats:italic>C</jats:italic>–<jats:italic>V</jats:italic> hysteresis and found that the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/SiO<jats:sub>2</jats:sub>-based stacks are thermally stable compared to ZrO<jats:sub>2</jats:sub>/SiO<jats:sub>2</jats:sub>- and HfO<jats:sub>2</jats:sub>/SiO<jats:sub>2</jats:sub>-based stacks. Using Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/SiO<jats:sub>2</jats:sub>-based stacks, we investigated the impact of oxide layer thickness and gate electrode materials and studied pulse-induced current changes in MOS field-effect transistors.</jats:p>

Topics

• semiconductor
• annealing
• atomic layer deposition