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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Tanaka, Atsushi
VTT Technical Research Centre of Finland
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023Pipe rheology of wet coating foams
- 2022Utilizing and Valorizing Oat and Barley Straw as an Alternative Source of Lignocellulosic Fiberscitations
- 2022Utilizing and Valorizing Oat and Barley Straw as an Alternative Source of Lignocellulosic Fiberscitations
- 2021Manufacture of all-wood sawdust-based particle board using ionic liquid-facilitated fusion processcitations
- 2021Experimental demonstration of GaN IMPATT diode at X-bandcitations
- 2020Wood based materials with ionic liquid fusion
- 2018The effect of oxyalkylation and application of polymer dispersions on the thermoformability and extensibility of papercitations
- 2017Yarns and films from ligno-cellulosic fines
- 2015The effect of physical adhesion promotion treatments on interfacial adhesion in cellulose-epoxy
- 2009Wet Web Rheology on a Paper Machine
- 2008Remarkable magneto-optical properties of europium selenide nanoparticles with wide energy gapscitations
- 2002Tearing Test for Paper Using a Tensile Testercitations
Places of action
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article
Experimental demonstration of GaN IMPATT diode at X-band
Abstract
<jats:title>Abstract</jats:title><jats:p>We report the first experimental demonstration of microwave oscillation in GaN impact ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this study is a single drift diode with a p<jats:sup>+</jats:sup>–n simple abrupt junction and vertical mesa termination. The reverse <jats:italic>I</jats:italic>–<jats:italic>V</jats:italic> characteristic of the diode shows low leakage current, clear avalanche breakdown, and high avalanche capability, as required for IMPATT operation. Microwave testing is performed in an X-band waveguide circuit with a reduced-height waveguide resonant cavity. Oscillations are observed at 9.52 GHz at a power of ∼56 mW.</jats:p>