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Ando, Yuto
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article
Experimental demonstration of GaN IMPATT diode at X-band
Abstract
<jats:title>Abstract</jats:title><jats:p>We report the first experimental demonstration of microwave oscillation in GaN impact ionization avalanche time transit (IMPATT) diodes at the X-band. The device used in this study is a single drift diode with a p<jats:sup>+</jats:sup>–n simple abrupt junction and vertical mesa termination. The reverse <jats:italic>I</jats:italic>–<jats:italic>V</jats:italic> characteristic of the diode shows low leakage current, clear avalanche breakdown, and high avalanche capability, as required for IMPATT operation. Microwave testing is performed in an X-band waveguide circuit with a reduced-height waveguide resonant cavity. Oscillations are observed at 9.52 GHz at a power of ∼56 mW.</jats:p>