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Yagasaki, Keito
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article
Investigation of Ga–Nb co-doped barium strontium titanate ceramics for DC-bias free dielectrics
Abstract
<jats:title>Abstract</jats:title><jats:p>The Ba<jats:sub>0.8</jats:sub>Sr<jats:sub>0.2</jats:sub>Ti<jats:sub>1−2<jats:italic>x</jats:italic></jats:sub>Ga<jats:sub><jats:italic>x</jats:italic></jats:sub>Nb<jats:sub><jats:italic>x</jats:italic></jats:sub>O<jats:sub>3</jats:sub> (0 ≤ <jats:italic>x</jats:italic> ≤ 0.10) ceramics were fabricated and the electrical properties were evaluated regarding DC-bias and temperature characteristics of the dielectric properties. The ceramics with <jats:italic>x</jats:italic> = 0.10 exhibited a stable dielectric constant with a change of–40% within 25 °C–150 °C. The dielectric loss of all the co-doped ceramics was below 2% within 25 °C–200 °C. The Ba<jats:sub>0.8</jats:sub>Sr<jats:sub>0.2</jats:sub>Ti<jats:sub>1−2<jats:italic>x</jats:italic></jats:sub>Ga<jats:sub><jats:italic>x</jats:italic></jats:sub>Nb<jats:sub><jats:italic>x</jats:italic></jats:sub>O<jats:sub>3</jats:sub> ceramics showed a higher dielectric constant with a lower DC-bias dependence as compared to previous study on co-doped BaTiO<jats:sub>3</jats:sub> ceramics. The Ba<jats:sub>0.8</jats:sub>Sr<jats:sub>0.2</jats:sub>Ti<jats:sub>0.20</jats:sub>Ga<jats:sub>0.10</jats:sub>Nb<jats:sub>0.10</jats:sub>O<jats:sub>3</jats:sub> ceramics exhibited the best results of DC-bias dependence ≈−24%, dielectric constant at 100 kV cm<jats:sup>−1</jats:sup> ≈ 560, and the dielectric constant at 0 kV cm<jats:sup>−1</jats:sup> ≈ 735. The better results for the Ga–Nb co-doped BST ceramics might be due to the higher contribution of the ionic polarization in the BST base matrix resulting in a shallower potential energy curve.</jats:p>