693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mori, Takao
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2024Thermoelectric performance of n-type Bi2S3-alloyed Bi2Te2.7Se0.3
- 2024Outstanding Room‐Temperature Thermoelectric Performance of n‐type Mg<sub>3</sub>Bi<sub>2</sub>‐Based Compounds Through Synergistically Combined Band Engineering Approachescitations
- 2024Enhanced thermoelectric performance of p-type BiSbTe through incorporation of magnetic CrSbcitations
- 2024Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge Statescitations
- 2024PbSe Quantum Dot Superlattice Thin Films for Thermoelectric Applicationscitations
- 2024PbSe Quantum Dot Superlattice Thin Films for Thermoelectric Applicationscitations
- 2024Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x </sub>Ge<sub> x </sub> thermoelectric thin filmscitations
- 2023Room-Temperature Thermoelectric Performance of n‑Type Multiphase Pseudobinary Bi 2 Te 3 –Bi 2 S 3 Compounds: Synergic Effects of Phonon Scattering and Energy Filteringcitations
- 2023Investigation of Mn Single and Co-Doping in Thermoelectric CoSb 3 -Skutterudite: A Way Toward a Beneficial Composite Effectcitations
- 2023Effect of the annealing treatment on structural and transport properties of thermoelectric Smy(FexNi1-x)4Sb12thin filmscitations
- 2023Enhanced High-Temperature Thermoelectric Performance of Yb 4 Sb 3 via Ce/Bi Co-doping and Metallic Contact Deposition for Device Integrationcitations
- 2023Rhombohedral Boron Monosulfide as a p-Type Semiconductorcitations
- 2023Surface chemical states and structures of epitaxial Mg<sub>2</sub>Sn thermoelectric thin filmscitations
- 2022Feasibility of high performance in <i>p</i>‐type Ge<sub>1−</sub><i><sub>x</sub></i>Bi<i><sub>x</sub></i>Te materials for thermoelectric modulescitations
- 2022A hierarchical design for thermoelectric hybrid materials: Bi2Te3 particles covered by partial Au skins enhance thermoelectric performance in sticky thermoelectric materialscitations
- 2022Thermoelectric properties of Cu‐Doped Heusler compound Fe<sub>2‐<i>x</i></sub>Cu<sub><i>x</i></sub>VAlcitations
- 2022Heterometallic Benzenehexathiolato Coordination Nanosheets: Periodic Structure Improves Crystallinity and Electrical Conductivitycitations
- 2022New record high thermoelectric ZT of delafossite-based CuCrO<SUB>2</SUB> thin films obtained by simultaneously reducing electrical resistivity and thermal conductivity via heavy doping with controlled residual stresscitations
- 2022Heterometallic Benzenehexathiolato Coordination Nanosheets: Periodic Structure Improves Crystallinity and Electrical Conductivity.
- 2022Facile Fabrication of N-Type Flexible CoSb3-xTex Skutterudite/PEDOT:PSS Hybrid Thermoelectric Filmscitations
- 2022Improvement of Thermoelectric Properties via Texturation Using a Magnetic Slip Casting Process-The Illustrative Case of CrSi2citations
- 2021Transport properties of a molybdenum antimonide-telluride with dispersed NiSb nanoparticlescitations
- 2021Robust, Transparent Hybrid Thin Films of Phase-Change Material Sb2S3 Prepared by Electrophoretic Depositioncitations
- 2021Robust, Transparent Hybrid Thin Films of Phase-Change Material Sb 2 S 3 Prepared by Electrophoretic Depositioncitations
- 2021Fabrication and Evaluation of Low-Cost CrSi2 Thermoelectric Legscitations
- 2021Fabrication and Evaluation of Low-Cost CrSi2 Thermoelectric Legscitations
- 2021Synthesis of novel hexamolybdenum cluster-functionalized copper hydroxide nanocomposites and its catalytic activity for organic molecule degradationcitations
- 2020Improvement in the thermoelectric properties of porous networked Al-doped ZnO nanostructured materials synthesized via an alternative interfacial reaction and low-pressure SPS processingcitations
- 2020Influence of Stoichiometry and Aging at Operating Temperature on Thermoelectric Higher Manganese Silicidescitations
- 2020New Synthesis Route for Complex Borides; Rapid Synthesis of Thermoelectric Yttrium Aluminoboride via Liquid-Phase Assisted Reactive Spark Plasma Sinteringcitations
- 2020Screening of transition (Y, Zr, Hf, V, Nb, Mo, and Ru) and rare-earth (La and Pr) elements as potential effective dopants for thermoelectric GeTe – an experimental and theoretical appraisalcitations
- 2019Development of nanoscale thermocouple probes for local thermal measurementscitations
- 2018Visualizing nanoscale heat pathwayscitations
- 2018Enhanced thermoelectric performance of Bi-Sb-Te/Sb2O3 nanocomposites by energy filtering effectcitations
- 2017Sb Doping of Metallic CuCr2S4 as a Route to Highly Improved Thermoelectric Propertiescitations
- 2017Nano-micro-porous skutterudites with 100% enhancement in ZT for high performance thermoelectricitycitations
- 2017Thermoelectric properties of boron carbide/HfB2 compositescitations
- 2015Nanoscale characterization of the thermal interface resistance of a heat-sink composite material by in situ TEMcitations
- 2003Direct pyrolysis method for superconducting crystalline MgB2 nanowirescitations
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article
Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x </sub>Ge<sub> x </sub> thermoelectric thin films
Abstract
<jats:title>Abstract</jats:title><jats:p>Defect formation in epitaxial Mg<jats:sub>2</jats:sub>Sn<jats:sub>1–<jats:italic>x</jats:italic></jats:sub>Ge<jats:sub><jats:italic>x</jats:italic></jats:sub> thermoelectric (TE) thin films grown via MBE was studied. We examined the defect formations and structures using cross-sectional transmission electron microscopy and positron annihilation spectroscopy. The defect formation tends to be influenced by Ge incorporation into the Mg<jats:sub>2</jats:sub>Sn matrix phase of epitaxial thin films. Mg vacancies (<jats:italic>V</jats:italic><jats:sub>Mg</jats:sub>) were identified as point defects, primarily concentrated in the film’s mid-layer. In films with higher Ge composition, stacking faults were observed. The concentration of vacancy-type point defects decreased as the Ge concentration increased. This implies that the vacancy atoms, which would have otherwise been created by increasing chemical pressure due to the higher Ge content, might have played a role in the formation of stacking faults. The high concentration of vacancy-type defects resulted in the lowest thermal conductivity, demonstrating their significance as effective phonon scattering centers in epitaxial TE films.</jats:p>