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article
Effects of carbon impurity in ALD-Al<sub>2</sub>O<sub>3</sub> film on HAXPES spectrum and electrical properties of Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS structure
Abstract
<jats:title>Abstract</jats:title><jats:p>In this study, the effects of carbon impurity in the atomic layer deposited-Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film on the hard X-ray photoelectron spectroscopy (HAXPES) spectra and the electrical properties of metal–insulator–semiconductor (MIS) structure were measured. The carbon concentration in the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film was adjusted by varying the deposition conditions (precursor: trimethylaluminum, Al(CH<jats:sub>3</jats:sub>)<jats:sub>3</jats:sub>, or dimethylaluminum hydride, Al(CH<jats:sub>3</jats:sub>)<jats:sub>2</jats:sub>H, oxidant, and deposition temperature) in the atomic layer deposition process. The HAXPES measurements revealed the correlation between full width at half maximum (FWHM) of Al 1 <jats:italic>s</jats:italic> and O 1 <jats:italic>s</jats:italic> spectra and the carbon concentration in the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film. Furthermore, the negative charges in the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film could change the FWHM, attributed to the carbon impurity. The correlation between the carbon concentration and the electrical characteristics of the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/AlGaN/GaN MIS structure was analyzed. The interface state density and the effective charge density were dependent on the carbon concentration in the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film.</jats:p>