| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Denbaars, Steven P.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodescitations
- 2022Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices
- 2021Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction controlcitations
- 2021Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratiocitations
- 2021Damage-free substrate removal technique: wet undercut etching of semipolar 202¯1 laser structures by incorporation of un/relaxed sacrificial layer single quantum well
- 2021New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substratecitations
- 2021Highly Conductive n-Al 0.65 Ga 0.35 N Grown by MOCVD Using Low V/III Ratio
- 2020Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaNcitations
- 2012Optical Characterization of Double Peak Behavior in {10(1)over-bar1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substratescitations
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article
Damage-free substrate removal technique: wet undercut etching of semipolar 202¯1 laser structures by incorporation of un/relaxed sacrificial layer single quantum well
Abstract
<jats:title>Abstract</jats:title><jats:p>We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In<jats:sub>0.12</jats:sub>Ga<jats:sub>0.88</jats:sub>N single quantum well (SL-SQW) types in semipolar (<jats:inline-formula><jats:tex-math> <?CDATA $20{2}1$?> </jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"><mml:mn>20</mml:mn><mml:mover accent="true"><mml:mn>2</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>1</mml:mn></mml:math><jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="jjapabf36dieqn3.gif" xlink:type="simple" /></jats:inline-formula>) flip-chip laser diode (FC-LD) structures. Although 40 nm type I promoted the development of high-quality green active region devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10 nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.</jats:p>