• Alyamani, Ahmed Y.
• Nakamura, Shuji
• Abbas, Arwa Saud
• Denbaars, Steven P.

Abstract

<jats:title>Abstract</jats:title><jats:p>We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In<jats:sub>0.12</jats:sub>Ga<jats:sub>0.88</jats:sub>N single quantum well (SL-SQW) types in semipolar (<jats:inline-formula><jats:tex-math> <?CDATA $20{2}1$?> </jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"><mml:mn>20</mml:mn><mml:mover accent="true"><mml:mn>2</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>1</mml:mn></mml:math><jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="jjapabf36dieqn3.gif" xlink:type="simple" /></jats:inline-formula>) flip-chip laser diode (FC-LD) structures. Although 40 nm type I promoted the development of high-quality green active region devices in terms of managing strain relaxation, processing was required under low-temperature KOH. However, 10 nm type II exhibited a smooth n-type GaN surface with room-temperature KOH, thereby promoting the applicability of the proposed technique for either a short light emitter or a combination with type I. The temperature-dependent PECE of SL-SQW types is important in realizing advanced FC-LDs.</jats:p>

Topics

• impedance spectroscopy
• surface
• etching