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Razeghi, Manijeh
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Publications (5/5 displayed)
- 2023Investigation of Enhanced Heteroepitaxy and Electrical Properties in <i>κ</i>‐Ga<sub>2</sub>O<sub>3</sub> Due to Interfacing with <i>β</i>‐Ga<sub>2</sub>O<sub>3</sub> Template Layerscitations
- 2022High Power Mid-Infrared Quantum Cascade Lasers Grown on Sicitations
- 2021Microstrip Array Ring FETs with 2D p-Ga2O3 Channels Grown by MOCVDcitations
- 2013Growth of "moth-eye" ZnO nanostructures on Si(111), c-Al2O3, ZnO and steel substrates by pulsed laser depositioncitations
- 2013Differential Fano interference spectroscopy of subwavelength hole arrays for mid-infrared mass sensors
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article
High Power Mid-Infrared Quantum Cascade Lasers Grown on Si
Abstract
<jats:p>This article details the demonstration of a strain-balanced, InP-based mid-infrared quantum cascade laser structure that is grown directly on a Si substrate. This is facilitated by the creation of a metamorphic buffer layer that is used to convert from the lattice constant of Si (0.543 nm) to that of InP (0.587 nm). The laser geometry utilizes two top contacts in order to be compatible with future large-scale integration. Unlike previous reports, this device is capable of room temperature operation with up to 1.6 W of peak power. The emission wavelength at 293 K is 4.82 μm, and the device operates in the fundamental transverse mode.</jats:p>