| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mardare, Andrei Ionut
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilitiescitations
- 2021Electrochimica Acta / A theoretical and experimental framework for the formation of mixed anodic films on combinatorial aluminium-cerium alloyscitations
- 2021In-Situ Corrosion Screening of Co-Sputtered (Fe-Cr-Ni) Alloy Thin Film Library in Simulated Human Physiological Conditioncitations
- 2021Gallium-enhanced aluminum and copper electromigration performance for flexible electronicscitations
- 2021Journal of Solid State Electrochemistry / Mixed oxide growth on combinatorial aluminium–gadolinium alloys : a thermodynamic and first‑principles approach
- 2021ACS Applied Materials & Interfaces / Gallium-enhanced aluminum and copper electromigration performance for flexible electronicscitations
- 2020Physica Status Solidi (A) - Applications and Materials Science / Corrosion and structural properties of erbium-zinc thin films at low‐to‐medium erbium concentrations
- 2020ChemElectroChem / A thermodynamic approach for selection of anodizing electrolytes in aluminium‐holmium systemcitations
- 2018Science and Technology of Advanced Materials / Basic properties mapping of anodic oxides in the hafnium–niobium–tantalum ternary systemcitations
- 2016RSC Advances / Spectroscopic ellipsometry for compositionally induced bandgap tuning of combinatorial niobium-tantalum anodic oxidescitations
- 2015Electrocatalytic oxidation of glucose by screening combinatorial copper-nickel alloyscitations
- 2014Electrochemistry on binary valve metal combinatorial libraries: niobium-tantalum thin filmscitations
- 2014Properties of anodic oxides grown on a hafnium-tantalum-titanium thin film librarycitations
- 2013Scanning droplet cell microscopy on a wide range hafnium-niobium thin film combinatorial librarycitations
- 2009High throughput growth, modification and characterization of thin anodic oxides on valve metals
- 2009A combinatorial passivation study of Ta–Ti alloyscitations
- 2008High throughput growth and in situ characterization of anodic oxides on Ti, Ta and Hf combinatorial alloys
- 2008Combinatorial microelectrochemistry with a scanning droplet cell on binary and ternary Ti, Ta and Hf alloys
Places of action
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article
Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities
Abstract
<jats:p>A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, with a compositional spread ranging between 22 and 64 at.% Ti was anodically oxidised, the mixed oxide being the active layer in MIM-type structures completed by Pt discreet top electrode patterning. By studying I–U sweeps, memristors with self-rectifying and volatile behaviour were identified. Moreover, all the analysed memristors demonstrated multilevel properties. The best-performing memristors showed HRS/LRS (high resistive state/low resistive state) ratios between 4 and 6 × 105 and very good retention up to 106 successive readings. The anodic memristors grown along the compositional spread showed very good endurance up to 106 switching cycles, excluding those grown from alloys containing between 31 and 39 at.% Ti, which withstood only 10 switching cycles. Taking into consideration all the parameters studied, the Nb-46 at.% Ti composition was screened as the parent metal alloy composition, leading to the best-performing anodic memristor in this alloy system. The results obtained suggest that memristive behaviour is based on an interfacial non-filamentary type of resistive switching, which is consistent with the performed cross-sectional TEM structural and chemical characterisation.</jats:p>