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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bauch, Thilo
General Electric (Finland)
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023Signature of quantum criticality in cuprates by charge density fluctuationscitations
- 2023Signature of quantum criticality in cuprates by charge density fluctuationscitations
- 2023Doping dependence of the upper critical field in untwinned YBCO thin filmscitations
- 2023Low-Vacuum Catalyst-Free Physical Vapor Deposition and Magnetotransport Properties of Ultrathin Bi2Se3 Nanoribbonscitations
- 2023Oxygen ordering in untwinned YBa2Cu3 O7-δ films driven by electrothermal stresscitations
- 2022Nanometric Moiré Stripes on the Surface of Bi2Se3Topological Insulatorcitations
- 2021Restored strange metal phase through suppression of charge density waves in underdoped YBCOcitations
- 2018Uniform doping of graphene close to the charge neutrality point by polymer-assisted spontaneous assembly of molecular dopantscitations
Places of action
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article
Low-Vacuum Catalyst-Free Physical Vapor Deposition and Magnetotransport Properties of Ultrathin Bi2Se3 Nanoribbons
Abstract
<jats:p>In this work, a simple catalyst-free physical vapor deposition method is optimized by adjusting source material pressure and evaporation time for the reliable obtaining of freestanding nanoribbons with thicknesses below 15 nm. The optimum synthesis temperature, time and pressure were determined for an increased yield of ultrathin Bi2Se3 nanoribbons with thicknesses of 8–15 nm. Physical and electrical characterization of the synthesized Bi2Se3 nanoribbons with thicknesses below 15 nm revealed no degradation of properties of the nanoribbons, as well as the absence of the contribution of trivial bulk charge carriers to the total conductance of the nanoribbons.</jats:p>