| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pere, Roca I. Cabarrocas
Institut Photovoltaïque d’Île-de-France
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2024Direct growth of highly oriented GaN thin films on silicon by remote plasma CVDcitations
- 2024Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride depositioncitations
- 2024Three Terminal Organic-Silicon Tandem Models
- 2024Insights into the growth of GaN thin films through liquid gallium sputtering: A plasma-film combined analysiscitations
- 2023Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperaturecitations
- 2023Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditionscitations
- 2023Maskless patterned plasma fabrication of interdigitated back contact silicon heterojunction solar cells: characterization and optimizationcitations
- 2022Wafer-scale pulsed laser deposition of ITO for solar cells: reduced damage vs. interfacial resistancecitations
- 2020Hydrogen Plasma-Assisted Growth of Gold Nanowirescitations
- 2019Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor depositioncitations
- 2019Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVDcitations
- 2019Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVDcitations
- 2016Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integrationcitations
- 2016Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trappingcitations
- 2014In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe-Ni alloy substrate for photovoltaic applicationscitations
- 2013Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowirescitations
- 2012Amorphous silicon diamond based heterojunctions with high rectification ratiocitations
- 2012Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cellscitations
- 2012Stress characterization of thin microcrystalline silicon films
- 2012Low temperature plasma deposition of silicon thin films: From amorphous to crystallinecitations
- 2007Hybrid solar cells based on thin-film silicon and P3HTcitations
- 2002Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmascitations
Places of action
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article
Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions
Abstract
International audience ; We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a plasma-enhanced chemical vapor deposition (PECVD) method. We study the structure of the catalyst nanoparticles (NPs) throughout a two-step process that includes a hydrogen plasma pre-treatment at 200 • C and the SiNW growth itself in a hydrogen-silane plasma at 420 • C. We show that the H 2-plasma induces a coalescence of the Cu-rich cores of as-deposited thermally evaporated NPs that does not occur when the same annealing is applied without plasma. The SiNW growth process at 420 • C induces a phase transformation of the catalyst cores to Cu 7 In 3 ; while a hydrogen plasma treatment at 420 • C without silane can lead to the formation of the Cu 11 In 9 phase. In situ transmission electron microscopy experiments show that the SiNWs synthesis with Cu-In bimetallic catalyst NPs follows an essentially vapor-solid-solid process. By adjusting the catalyst composition, we manage to obtain small-diameter SiNWs-below 10 nm-among which we observe the metastable hexagonal diamond phase of Si, which is predicted to have a direct bandgap.