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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Rančić, M. |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sistani, Masiar
TU Wien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursorcitations
- 2022Composition dependent electrical transport in Si 1−x Ge x nanosheets with monolithic single-elementary Al contactscitations
- 2022Monolithic and single-crystalline aluminum-silicon heterostructurescitations
- 2022Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructurescitations
- 2022Focused Ion Beam vs Focused Electron Beam Deposition of Cobalt Silicide Nanostructures Using Single-Source Precursorscitations
- 2021Al–Ge–Al nanowire heterostructure: from single‐hole quantum dot to Josephson effectcitations
- 2020Stimulated Raman scattering in Ge nanowirescitations
- 2019Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowirescitations
- 2019Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitterscitations
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article
Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor
Abstract
Si1−xGex nanowires (NWs) were prepared by gold-supported chemical vapor deposition (CVD) using a single-source precursor with preformed Si–Ge bonds. Besides the tamed reactivity of the precursor, the approach reduces the process parameters associated with the control of decomposition characteristics and the dosing of individual precursors. The group IV alloy NWs are single crystalline with a constant diameter along their axis. During the wire growth by low pressure CVD, an Au-containing surface layer on the NWs forms by surface diffusion from the substrate, which can be removed by a combination of oxidation and etching. The electrical properties of the Si1−xGex/Au core-shell NWs are compared to the Si1−xGex NWs after Au removal. Core–shell NWs show signatures of metal-like behavior, while the purely semiconducting NWs reveal typical signatures of intrinsic Si1−xGex. The synthesized materials should be of high interest for applications in nano- and quantum-electronics.