• Shevelkov, Andrei V.
• Knotko, Alexander V.
• Lepnev, Leonid S.
• Grigorieva, Anastasia V.
• Umedov, Shodruz T.
• Charkin, Dmitri O.
• Kolesnikov, Efim
• Sobolev, Alexey

Abstract

<jats:p>Metal gallium as a low-melting solid was applied in a mixture with elemental iodine to substitute tin(IV) in a promising light-harvesting phase of Cs2SnI6 by a reactive sintering method. The reducing power of gallium was applied to influence the optoelectronic properties of the Cs2SnI6 phase via partial reduction of tin(IV) and, very likely, substitute partially Sn4+ by Ga3+. The reduction of Sn4+ to Sn2+ in the Cs2SnI6 phase contributes to the switching from p-type conductivity to n-type, thereby improving the total concentration and mobility of negative-charge carriers. The phase composition of the samples obtained was studied by X-ray diffraction (XRD) and 119Sn Mössbauer spectroscopy (MS). It is shown that the excess of metal gallium in a reaction melt leads to the two-phase product containing Cs2SnI6 with Sn4+ and β-CsSnI3 with Sn2+. UV–visible absorption spectroscopy shows a high absorption coefficient of the composite material.</jats:p>

Topics

• impedance spectroscopy
• mobility
• x-ray diffraction
• melt
• reactive
• composite
• mass spectrometry
• tin
• sintering
• Gallium
• Mössbauer spectroscopy