| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sobolev, Alexey
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023Controlled Reduction of Sn4+ in the Complex Iodide Cs2SnI6 with Metallic Galliumcitations
- 2009Electronic state of the 57 Fe probe atoms in perovskites LaMO 3 (M = Ni, Cu)citations
- 2009Electronic state of 57Fe Mössbauer probe atoms in Cu(III) oxides with perovskite and perovskite-related structurescitations
- 2008On the evolution of the DyNiO3 perovskite across the metal–insulator transition though neutron diffraction and Mössbauer spectroscopy studiescitations
- 2007Electronic state of 57Fe used as Mössbauer probe in the perovskites LaMO3 (M=Ni and Cu)citations
- 2007Sn20.5□3.5As22I8: A Largely Disordered Cationic Clathrate with a New Type of Superstructure and Abnormally Low Thermal Conductivitycitations
- 2006High oxygen pressures and the stabilization of the highest oxidation states of transition metals - Mössbauer spectroscopic characterization of the induced electronic phenomenacitations
- 2005Mössbauer characterization of 57Fe dopant ions across the insulator-metal transition in ANi0.98Fe0.02O3 (A = Nd, Lu) perovskites.citations
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article
Controlled Reduction of Sn4+ in the Complex Iodide Cs2SnI6 with Metallic Gallium
Abstract
<jats:p>Metal gallium as a low-melting solid was applied in a mixture with elemental iodine to substitute tin(IV) in a promising light-harvesting phase of Cs2SnI6 by a reactive sintering method. The reducing power of gallium was applied to influence the optoelectronic properties of the Cs2SnI6 phase via partial reduction of tin(IV) and, very likely, substitute partially Sn4+ by Ga3+. The reduction of Sn4+ to Sn2+ in the Cs2SnI6 phase contributes to the switching from p-type conductivity to n-type, thereby improving the total concentration and mobility of negative-charge carriers. The phase composition of the samples obtained was studied by X-ray diffraction (XRD) and 119Sn Mössbauer spectroscopy (MS). It is shown that the excess of metal gallium in a reaction melt leads to the two-phase product containing Cs2SnI6 with Sn4+ and β-CsSnI3 with Sn2+. UV–visible absorption spectroscopy shows a high absorption coefficient of the composite material.</jats:p>