| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mendes, Manuel Joao
Universidade Nova de Lisboa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Aerogel cathodes for electrochemical CO2 reduction [Comunicação oral]
- 2024Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineeringcitations
- 2024Surface modification of halide perovskite using EDTA-complexed SnO2 as electron transport layer in high performance solar cellscitations
- 2023Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporationcitations
- 2023Parylene-Sealed Perovskite Nanocrystals Down-Shifting Layer for Luminescent Spectral Matching in Thin Film Photovoltaicscitations
- 2023Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineeringcitations
- 2022Copper-Arsenic-Sulfide Thin-Films from Local Raw Materials Deposited via RF Co-Sputtering for Photovoltaicscitations
- 2022Observation of Grain Boundary Passivation and Charge Distribution in Perovskite Films Improved with Anti-solvent Treatmentcitations
- 2020Photonic-structured TCO front contacts yielding optical and electrically enhanced thin-film solar cellscitations
- 2019All-Thin-Film Perovskite/C-Si Four-Terminal Tandems: Interlayer and Intermediate Contacts Optimizationcitations
- 2019Wave-optical front structures on silicon and perovskite thin-film solar cellscitations
- 2019Lightwave trapping in thin film solar cells with improved photonic-structured front contactscitations
- 2019Photonic-structured TiO 2 for high-efficiency, flexible and stable Perovskite solar cellscitations
- 2018Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layercitations
- 2018Ultra-fast plasmonic back reflectors production for light trapping in thin Si solar cellscitations
- 2017Low-temperature spray-coating of high-performing ZnOcitations
- 2016Influence of the Substrate on the Morphology of Self-Assembled Silver Nanoparticles by Rapid Thermal Annealingcitations
- 2014Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectorscitations
Places of action
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article
Copper-Arsenic-Sulfide Thin-Films from Local Raw Materials Deposited via RF Co-Sputtering for Photovoltaics
Abstract
<p>The inexorable increase of energy demand and the efficiency bottleneck of monocrystalline silicon solar cell technology is promoting the research and development of alternative photovoltaic materials. Copper-arsenic-sulfide (CAS) compounds are still rather unexplored in the literature, yet they have been regarded as promising candidates for use as p-type absorber in solar cells, owing to their broad raw material availability, suitable bandgap and high absorption coefficient. Here, a comprehensive study is presented on the structural and optoelectronic properties of CAS thin-films deposited via radio-frequency magnetron co-sputtering, using a commercial Cu target together with a Cu-As-S target with material obtained from local resources, specifically from mines in the Portuguese region of the Iberian Pyrite Belt. Raman and X-ray diffraction analysis confirm that the use of two targets results in films with pronounced stoichiometry gradients, suggesting a transition from amorphous CAS compounds to crystalline djurleite (Cu<sub>31</sub>S<sub>16</sub>), with the increasing proximity to the Cu target. Resistivity values from 4.7 mΩ·cm to 17.4 Ω·cm are obtained, being the lowest resistive films, those with pronounced sub-bandgap free-carrier absorption. The bandgap values range from 2.20 to 2.65 eV, indicating promising application as wide-bandgap semiconductors in third-generation (e.g., multi-junction) photovoltaic devices.</p>