| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Castán, Helena
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Topics
Publications (8/8 displayed)
- 2022Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Depositioncitations
- 2022Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Depositioncitations
- 2021Thermoelectrical Characterization of Piezoelectric Diaphragms: Towards a Better Understanding of Ferroelectrics for Future Memory Applications
- 2018Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxidescitations
- 2016Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applicationscitations
- 2012Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantationcitations
- 2009Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursorscitations
- 2009Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectricscitations
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article
Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition
Abstract
<jats:p>HfO2 and Fe2O3 thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of Fe2O3. However, coercive force could also be enhanced by the choice of appropriate ratios of HfO2 and Fe2O3 in nanolaminated structures. Saturation magnetization was observed in the measurement temperature range of 5–350 K, decreasing towards higher temperatures and increasing with the films’ thicknesses and crystal growth. Coercive force tended to increase with a decrease in the thickness of crystallized layers. The films containing insulating HfO2 layers grown alternately with magnetic Fe2O3 exhibited abilities to both switch resistively and magnetize at room temperature. Resistive switching was unipolar in all the oxides mounted between Ti and TiN electrodes.</jats:p>