| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vaz Pinto, Joana
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023Parylene-Sealed Perovskite Nanocrystals Down-Shifting Layer for Luminescent Spectral Matching in Thin Film Photovoltaicscitations
- 2023Self-sensing metallic material based on PZT particles produced by friction stir processing envisaging structural health monitoring applicationscitations
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2016Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistorscitations
- 2016Photocatalytic behavior of TiO2 films synthesized by microwave irradiationcitations
- 2016Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cellscitations
- 2016Smart optically active VO2 nanostructured layers applied in roof-type ceramic tiles for energy efficiencycitations
- 2014PVA composite catalytic membranes for hyacinth flavour synthesis in a pervaporation membrane reactorcitations
- 2013Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillarscitations
- 2013P-Type CuxO thin-film transistors produced by thermal oxidationcitations
- 2013Formation of oriented nickel aggregates in rutile single crystals by Ni implantationcitations
- 2012p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistorscitations
Places of action
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article
Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors
Abstract
<p>Indium oxide (In2O3)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In2O3 thin films and evaluating different annealing parameters on TCO’s properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped In2O3 when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10<sup>−2</sup> Ω.cm, a mobility of 6.65 cm<sup>2</sup>/V.s, and a carrier concentration of 1.72 × 10<sup>19</sup> cm<sup>−3</sup>. Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10<sup>−3</sup> Ω.cm, a mobility of 21 cm<sup>2</sup>/V.s, and a carrier concentration of 7.98 × 10<sup>19</sup> cm<sup>−3</sup>, in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.</p>