Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Santos, Rf

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (8/8 displayed)

  • 2024Benchmarking L-PBF Systems for Die Production: Powder, Dimensional, Surface, Microstructural and Mechanical Characterisation3citations
  • 2022Co-W Barrier Layers for Metallization of Copper Interconnects: Thermal Performance Analysis6citations
  • 2022Seedless Cu Electroplating on Ru-W Thin Films for Metallisation of Advanced Interconnects4citations
  • 2022PMMA Lens Arrays for Micro Concentrator Solar Cells Produced by Hot Embossingcitations
  • 2021The effect of Cr content on the corrosion resistance of WC-Ni-Cr-Mo composites36citations
  • 2020Microstructural characterization and corrosion resistance of WC-Ni-Cr-Mo composite - The effect of Mo43citations
  • 2017In the search of nanocrystallinity in tool-steel chips3citations
  • 2017Superparamagnetic core-shell nanocomplexes doped with Yb3+:Er3+/Ho3+ rare-earths for upconversion fluorescence14citations

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Costa, Jm
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Sequeiros, Ew
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Vieira, Mf
5 / 42 shared
Oliveira, Bmc
3 / 3 shared
Ferreira, Pj
2 / 5 shared
Piedade, Ap
1 / 1 shared
Savaris, Lcg
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Júnior, M.
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Rocha, Amf
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Senos, Amr
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Fonseca, C.
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Ferreira, Mgs
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Fernandes, Cm
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Vieira, Mt
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Costa, Bfo
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2022
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Co-Authors (by relevance)

  • Costa, Jm
  • Sequeiros, Ew
  • Vieira, Mf
  • Oliveira, Bmc
  • Ferreira, Pj
  • Piedade, Ap
  • Savaris, Lcg
  • Júnior, M.
  • Rocha, Amf
  • Sacramento, J.
  • Bastos, Ac
  • Cardoso, Jp
  • Malheiros, Lf
  • Rodrigues, F.
  • Senos, Amr
  • Fonseca, C.
  • Ferreira, Mgs
  • Fernandes, Cm
  • Ferro Rocha, Amf
  • Vieira, Mt
  • Godinho, Sc
  • Campos Goncalves, I.
  • Costa, Bfo
  • Duraes, L.
OrganizationsLocationPeople

article

Co-W Barrier Layers for Metallization of Copper Interconnects: Thermal Performance Analysis

  • Oliveira, Bmc
  • Santos, Rf
  • Ferreira, Pj
  • Piedade, Ap
  • Vieira, Mf
Abstract

The back-end-of-line (BEOL) copper interconnect structure has been subjected to downscaling for the last two decades, while the materials used for conforming and assuring its physical integrity during processing have faced significant obstacles as the single-digit nanometer process node is implemented. In particular, the diffusion barrier layer system comprised of Ta/TaN has faced major constraints when it comes to the electrical performance of the smaller Cu lines, and thus alternative formulations have been investigated in recent years, such as Ru-Ta or Co-W alloys. In this work, we assess how PVD (physical vapor deposition) deposited equimolar Co-W films perform when exposed to different vacuum annealing temperatures and how these films compare with the Ta adhesion layer used for Cu seeding in terms of dewetting resistance. The stacks were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) coupled with energy dispersive X-ray spectroscopy (EDX) mapping. The Cu film at the surface of the Cu/Co-W system exhibited grain growth starting at 300 degrees C, with the formation of abnormally large Cu grains starting at 450 degrees C. Sheet resistance reached a minimum value of 7.07 x 10(-6) omega/sq for the Cu/Co-W stack and 6.03 x 10(-6) omega/sq for the Cu/Ta stack, both for the samples annealed at 450 degrees C.

Topics
  • impedance spectroscopy
  • surface
  • grain
  • scanning electron microscopy
  • x-ray diffraction
  • physical vapor deposition
  • transmission electron microscopy
  • copper
  • annealing
  • Energy-dispersive X-ray spectroscopy
  • grain growth