| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Longo, Massimo
University of Rome Tor Vergata
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation
- 2024Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation
- 2022Growth, electronic and electrical characterization of Ge-Rich Ge-Sb-Te alloycitations
- 2022Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowirescitations
- 2022Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloycitations
- 2022Interface formation during the growth of phase change material heterostructures based on Ge-Rich Ge-Sb-Te alloyscitations
- 2021Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Siliconcitations
- 2021Large-Area {MOVPE} Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)citations
- 2021Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonancecitations
- 2019High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growthcitations
- 2018Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVDcitations
Places of action
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article
Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy
Abstract
<jats:p>In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties and carefully ascertain the alloy composition to be GST 29 20 28. Subsequently, Raman spectroscopy is employed to corroborate the results from the photoemission study. X-ray diffraction is used upon annealing to study the crystallization of such an alloy and identify the effects of phase separation and segregation of crystalline Ge with the formation of grains along the [111] direction, as expected for such Ge-rich Ge–Sb–Te alloys. In addition, we report on the electrical characterization of single memory cells containing the Ge-rich Ge–Sb–Te alloy, including I-V characteristic curves, programming curves, and SET and RESET operation performance, as well as upon annealing temperature. A fair alignment of the electrical parameters with the current state-of-the-art of conventional (GeTe)n-(Sb2Te3)m alloys, deposited by PVD, is found, but with enhanced thermal stability, which allows for data retention up to 230 °C.</jats:p>