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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Ceccio, Giovanni
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024Study of thin film composites based on LiCoO2 and C60 using neutron depth profiling and atomic force microscopycitations
- 2024Observation of preferential sputtering of Si/graphite anodes from Li-ion cells by GD-OES and its validation by neutron depth profilingcitations
- 2022Etching and Doping of Pores in Polyethylene Terephthalate Analyzed by Ion Transmission Spectroscopy and Nuclear Depth Profilingcitations
- 2022Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar+ ion beam
- 2022The Key Role of Tin (Sn) in Microstructure and Mechanical Properties of Ti2SnC (M2AX) Thin Nanocrystalline Films and Powdered Polycrystalline Samplescitations
- 2016Structural investigation and laser plasma diagnostics of borate glasses containing silver nanoparticlescitations
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article
The Key Role of Tin (Sn) in Microstructure and Mechanical Properties of Ti2SnC (M2AX) Thin Nanocrystalline Films and Powdered Polycrystalline Samples
Abstract
<jats:p>Layered ternary Ti2SnC carbides have attracted significant attention because of their advantage as a M2AX phase to bridge the gap between properties of metals and ceramics. In this study, Ti2SnC materials were synthesized by two different methods—an unconventional low-energy ion facility (LEIF) based on Ar+ ion beam sputtering of the Ti, Sn, and C targets and sintering of a compressed mixture consisting of Ti, Sn, and C elemental powders up to 1250 °C. The Ti2SnC nanocrystalline thin films obtained by LEIF were irradiated by Ar+ ions with an energy of 30 keV to the fluence of 1.1015 cm−2 in order to examine their irradiation-induced resistivity. Quantitative structural analysis obtained by Cs-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) confirmed transition from ternary Ti2SnC to binary Ti0.98C carbide due to irradiation-induced β-Sn surface segregation. The nanoindentation of Ti2SnC thin nanocrystalline films and Ti2SnC polycrystalline powders shows that irradiation did not affect significantly their mechanical properties when concerning their hardness (H) and Young’s modulus (E). We highlighted the importance of the HAADF-STEM techniques to track atomic pathways clarifying the behavior of Sn atoms at the proximity of irradiation-induced nanoscale defects in Ti2SnC thin films.</jats:p>