| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Giannazzo, Filippo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023On the Possibility of Realizing a 2D Structure of Si-N Bonds by Metal-Organic Chemical Vapor Deposition
- 20232D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interfacecitations
- 20232D graphitic-like gallium nitride and other structural selectivity in confinement at graphene/SiC interfacecitations
- 2021MOCVD of AlN on epitaxial graphene at extreme temperaturescitations
- 2021Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Depositioncitations
- 2021Epitaxial Graphene on 4H-SiC (0001) as a Versatile Platform for Materials Growth : Mini-Reviewcitations
- 2021Indium Nitride at the 2D Limitcitations
- 2020Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interfacecitations
- 2019Nano-structured TiO2 grown by low-temperature reactive sputtering for planar perovskite solar cellscitations
- 2018Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaNcitations
- 2017Ambipolar MoS2Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalizationcitations
- 2013Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiCcitations
- 2011Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
- 2010Nanoscale characterization of electrical transport at metal/3C-SiC interfacescitations
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article
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
Abstract
<jats:p>This paper reports an investigation of the structural, chemical and electrical properties of ultra-thin (5 nm) aluminum nitride (AlN) films grown by plasma enhanced atomic layer deposition (PE-ALD) on gallium nitride (GaN). A uniform and conformal coverage of the GaN substrate was demonstrated by morphological analyses of as-deposited AlN films. Transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) analyses showed a sharp epitaxial interface with GaN for the first AlN atomic layers, while a deviation from the perfect wurtzite stacking and oxygen contamination were detected in the upper part of the film. This epitaxial interface resulted in the formation of a two-dimensional electron gas (2DEG) with a sheet charge density ns ≈ 1.45 × 1012 cm−2, revealed by Hg-probe capacitance–voltage (C–V) analyses. Nanoscale resolution current mapping and current–voltage (I–V) measurements by conductive atomic force microscopy (C-AFM) showed a highly homogeneous current transport through the 5 nm AlN barrier, while a uniform flat-band voltage (VFB ≈ 0.3 V) for the AlN/GaN heterostructure was demonstrated by scanning capacitance microscopy (SCM). Electron transport through the AlN film was shown to follow the Fowler–Nordheim (FN) tunneling mechanism with an average barrier height of <ΦB> = 2.08 eV, in good agreement with the expected AlN/GaN conduction band offset.</jats:p>