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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Tukiainen, Antti
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Ti3+ Self-Doping-Mediated Optimization of TiO2 Photocatalyst Coating Grown by Atomic Layer Depositioncitations
- 2022Insights into Tailoring of Atomic Layer Deposition Grown TiO2 as Photoelectrode Coating
- 2022Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2022Low-Temperature Route to Direct Amorphous to Rutile Crystallization of TiO2Thin Films Grown by Atomic Layer Depositioncitations
- 2022Tunable Ti3+-Mediated Charge Carrier Dynamics of Atomic Layer Deposition-Grown Amorphous TiO2citations
- 2021Comparison of the heat-treatment effect on carrier dynamics in TiO2 thin films deposited by different methodscitations
- 2021Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Interface Engineering of TiO2 Photoelectrode Coatings Grown by Atomic Layer Deposition on Siliconcitations
- 2020Optimization of photogenerated charge carrier lifetimes in ald grown tio2 for photonic applicationscitations
- 2019Thermophotonic cooling in GaAs based light emitterscitations
- 2019Highly efficient charge separation in model Z-scheme TiO2/TiSi2/Si photoanode by micropatterned titanium silicide interlayercitations
- 2019Observation of local electroluminescent cooling and identifying the remaining challenges
- 2018Surface doping of GaxIn1−xAs semiconductor crystals with magnesiumcitations
- 2017Structured metal/polymer back reflectors for III-V solar cells
- 2016High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD techniquecitations
- 2016Determination of composition and energy gaps of GaInNAsSb layers grown by MBEcitations
- 2016Optical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light Emitterscitations
- 2016Combined MBE-MOCVD process for high-efficiency multijunction solar cells
- 2016High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
- 2015Defects in dilute nitride solar cells
- 2015Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
- 2004Effects of rapid thermal annealing on deep levels in n -GaInPcitations
Places of action
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article
Optimization of photogenerated charge carrier lifetimes in ald grown tio2 for photonic applications
Abstract
Titanium dioxide (TiO2) thin films are widely employed for photocatalytic and photovoltaic applications where the long lifetime of charge carriers is a paramount requirement for the device efficiency. To ensure the long lifetime, a high temperature treatment is used which restricts the applicability of TiO2 in devices incorporating organic or polymer components. In this study, we exploited low temperature (100–150◦ C) atomic layer deposition (ALD) of 30 nm TiO2 thin films from tetrakis(dimethylamido)titanium. The deposition was followed by a heat treatment in air to find the minimum temperature requirements for the film fabrication without compromising the carrier lifetime. Femto-to nanosecond transient absorption spectroscopy was used to determine the lifetimes, and grazing incidence X-ray diffraction was employed for structural analysis. The optimal result was obtained for the TiO2 thin films grown at 150◦ C and heat-treated at as low as 300◦ C. The deposited thin films were amorphous and crystallized into anatase phase upon heat treatment at 300–500◦ C. The average carrier lifetime for amorphous TiO2 is few picoseconds but increases to >400 ps upon crystallization at 500◦ C. The samples deposited at 100◦ C were also crystallized as anatase but the carrier lifetime was <100 ps. ; Peer reviewed