| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Eng, Lukas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Probing Ferroelectric Phase Transitions in Barium Titanate Single Crystals via in-situ Second Harmonic Generation Microscopy
- 2023Impact of Ferroelectric Layer Thickness on Reliability of Back-End-of-Line-Compatible Hafnium Zirconium Oxide Filmscitations
- 2023A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealingcitations
- 2023Polarization Sensitivity in Scattering-Type Scanning Near-Field Optical Microscopy—Towards Nanoellipsometrycitations
- 2022Atomic layer deposition of yttrium iron garnet thin filmscitations
- 2022Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin filmscitations
- 2021Aging in Ferroelectric Si-Doped Hafnium Oxide Thin Filmscitations
- 2021Electric field-induced crystallization of ferroelectric hafnium zirconium oxidecitations
- 2021Tricyanidoferrates(−IV) and Ruthenates(−IV) with Non-Innocent Cyanido Ligandscitations
- 2021Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxidecitations
- 2021Impact of the SiO2interface layer on the crystallographic texture of ferroelectric hafnium oxidecitations
- 2020Structural and electrical comparison of si and zr doped hafnium oxide thin films and integrated fefets utilizing transmission kikuchi diffractioncitations
- 2016Multidomain Skyrmion Lattice State in Cu2OSeO3citations
- 2015Conductivity and magnetoresistance of La0.7Ce0.3MnO3-δ thin films under photoexcitationcitations
- 2015Optical antennae for near-field induced nonlinear photochemical reactions of photolabile azo-and amine groups
- 2014The Mn2+/Mn3+ state of La0.7Ce 0.3MnO3 by oxygen reduction and photodopingcitations
- 2014Near-field resonance shifts of ferroelectric barium titanate domains upon low-temperature phase transitioncitations
- 2013Strain-mediated elastic coupling in magnetoelectric nickel/barium-titanate heterostructurescitations
- 2010Web-like domain structure formation in barium titanate single crystalscitations
- 2010Poly(2-(dimethylamino)ethyl methacrylate) brushes with incorporated nanoparticles as a SERS active sensing layercitations
- 2010Fabrication of two-dimensional Au@FePt core-shell nanoparticle arrays by photochemical metal depositioncitations
- 2009Probing polarization and dielectric function of molecules with higher order harmonics in scattering-near-field scanning optical microscopycitations
- 2009Ferroelectric Lithographycitations
- 2005Surface photovoltage spectroscopy for the investigation of perovskite oxide interfacescitations
- 2002Metal salt complexation of spin-coated ultrathin diazosulfonate terpolymer filmscitations
- 2002Novel diazosulfonate terpolymers for the preparation of structured functionalized surfaces
Places of action
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article
Structural and electrical comparison of si and zr doped hafnium oxide thin films and integrated fefets utilizing transmission kikuchi diffraction
Abstract
Art. 384, 11 S. ; The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare the crystallographic phase and orientation of Si and Zr doped HfO2 thin films as well as integrated in a 22 nm fully-depleted silicon-on-insulator (FDSOI) ferroelectric field effect transistor (FeFET). Both HfO2 films showed a predominately orthorhombic phase in accordance with electrical measurements and X-ray diffraction XRD data. Furthermore, a stronger texture is found for the microstructure of the Si doped HfO2 (HSO) thin film, which is attributed to stress conditions inside the film stack during crystallization. For the HSO thin film fabricated in a metal-oxide-semiconductor (MOS) like structure, a different microstructure, with no apparent texture as well as a different fraction of orthorhombic phase is observed. The 22 nm FDSOI FeFET showed an orthorhombic phase for the HSO layer, as well as an out-of-plane texture of the [111]-axis, which is preferable for the application as non-volatile memory. ; 10 ; Nr.2