693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Mori, Takao
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2024Thermoelectric performance of n-type Bi2S3-alloyed Bi2Te2.7Se0.3
- 2024Outstanding Room‐Temperature Thermoelectric Performance of n‐type Mg<sub>3</sub>Bi<sub>2</sub>‐Based Compounds Through Synergistically Combined Band Engineering Approachescitations
- 2024Enhanced thermoelectric performance of p-type BiSbTe through incorporation of magnetic CrSbcitations
- 2024Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge Statescitations
- 2024PbSe Quantum Dot Superlattice Thin Films for Thermoelectric Applicationscitations
- 2024PbSe Quantum Dot Superlattice Thin Films for Thermoelectric Applicationscitations
- 2024Influence of Ge to the formation of defects in epitaxial Mg<sub>2</sub>Sn<sub>1−x </sub>Ge<sub> x </sub> thermoelectric thin filmscitations
- 2023Room-Temperature Thermoelectric Performance of n‑Type Multiphase Pseudobinary Bi 2 Te 3 –Bi 2 S 3 Compounds: Synergic Effects of Phonon Scattering and Energy Filteringcitations
- 2023Investigation of Mn Single and Co-Doping in Thermoelectric CoSb 3 -Skutterudite: A Way Toward a Beneficial Composite Effectcitations
- 2023Effect of the annealing treatment on structural and transport properties of thermoelectric Smy(FexNi1-x)4Sb12thin filmscitations
- 2023Enhanced High-Temperature Thermoelectric Performance of Yb 4 Sb 3 via Ce/Bi Co-doping and Metallic Contact Deposition for Device Integrationcitations
- 2023Rhombohedral Boron Monosulfide as a p-Type Semiconductorcitations
- 2023Surface chemical states and structures of epitaxial Mg<sub>2</sub>Sn thermoelectric thin filmscitations
- 2022Feasibility of high performance in <i>p</i>‐type Ge<sub>1−</sub><i><sub>x</sub></i>Bi<i><sub>x</sub></i>Te materials for thermoelectric modulescitations
- 2022A hierarchical design for thermoelectric hybrid materials: Bi2Te3 particles covered by partial Au skins enhance thermoelectric performance in sticky thermoelectric materialscitations
- 2022Thermoelectric properties of Cu‐Doped Heusler compound Fe<sub>2‐<i>x</i></sub>Cu<sub><i>x</i></sub>VAlcitations
- 2022Heterometallic Benzenehexathiolato Coordination Nanosheets: Periodic Structure Improves Crystallinity and Electrical Conductivitycitations
- 2022New record high thermoelectric ZT of delafossite-based CuCrO<SUB>2</SUB> thin films obtained by simultaneously reducing electrical resistivity and thermal conductivity via heavy doping with controlled residual stresscitations
- 2022Heterometallic Benzenehexathiolato Coordination Nanosheets: Periodic Structure Improves Crystallinity and Electrical Conductivity.
- 2022Facile Fabrication of N-Type Flexible CoSb3-xTex Skutterudite/PEDOT:PSS Hybrid Thermoelectric Filmscitations
- 2022Improvement of Thermoelectric Properties via Texturation Using a Magnetic Slip Casting Process-The Illustrative Case of CrSi2citations
- 2021Transport properties of a molybdenum antimonide-telluride with dispersed NiSb nanoparticlescitations
- 2021Robust, Transparent Hybrid Thin Films of Phase-Change Material Sb2S3 Prepared by Electrophoretic Depositioncitations
- 2021Robust, Transparent Hybrid Thin Films of Phase-Change Material Sb 2 S 3 Prepared by Electrophoretic Depositioncitations
- 2021Fabrication and Evaluation of Low-Cost CrSi2 Thermoelectric Legscitations
- 2021Fabrication and Evaluation of Low-Cost CrSi2 Thermoelectric Legscitations
- 2021Synthesis of novel hexamolybdenum cluster-functionalized copper hydroxide nanocomposites and its catalytic activity for organic molecule degradationcitations
- 2020Improvement in the thermoelectric properties of porous networked Al-doped ZnO nanostructured materials synthesized via an alternative interfacial reaction and low-pressure SPS processingcitations
- 2020Influence of Stoichiometry and Aging at Operating Temperature on Thermoelectric Higher Manganese Silicidescitations
- 2020New Synthesis Route for Complex Borides; Rapid Synthesis of Thermoelectric Yttrium Aluminoboride via Liquid-Phase Assisted Reactive Spark Plasma Sinteringcitations
- 2020Screening of transition (Y, Zr, Hf, V, Nb, Mo, and Ru) and rare-earth (La and Pr) elements as potential effective dopants for thermoelectric GeTe – an experimental and theoretical appraisalcitations
- 2019Development of nanoscale thermocouple probes for local thermal measurementscitations
- 2018Visualizing nanoscale heat pathwayscitations
- 2018Enhanced thermoelectric performance of Bi-Sb-Te/Sb2O3 nanocomposites by energy filtering effectcitations
- 2017Sb Doping of Metallic CuCr2S4 as a Route to Highly Improved Thermoelectric Propertiescitations
- 2017Nano-micro-porous skutterudites with 100% enhancement in ZT for high performance thermoelectricitycitations
- 2017Thermoelectric properties of boron carbide/HfB2 compositescitations
- 2015Nanoscale characterization of the thermal interface resistance of a heat-sink composite material by in situ TEMcitations
- 2003Direct pyrolysis method for superconducting crystalline MgB2 nanowirescitations
Places of action
| Organizations | Location | People |
|---|
article
Rhombohedral Boron Monosulfide as a p-Type Semiconductor
Abstract
<jats:p>Two-dimensional materials have wide ranging applications in electronic devices and catalysts owing to their unique properties. Boron-based compounds, which exhibit a polymorphic nature, are an attractive choice for developing boron-based two-dimensional materials. Among them, rhombohedral boron monosulfide (r-BS) has recently attracted considerable attention owing to its unique layered structure similar to that of transition metal dichalcogenides and a layer-dependent bandgap. However, experimental evidence that clarifies the charge carrier type in the r-BS semiconductor is lacking. In this study, we synthesized r-BS and evaluated its performance as a semiconductor by measuring the Seebeck coefficient and photo-electrochemical responses. The properties unique to p-type semiconductors were observed in both measurements, indicating that the synthesized r-BS is a p-type semiconductor. Moreover, a distinct Fano resonance was observed in Fourier transform infrared absorption spectroscopy, which was ascribed to the Fano resonance between the E(2) (TO) phonon mode and electrons in the band structures of r-BS, indicating that the p-type carrier was intrinsically doped in the synthesized r-BS. These results demonstrate the potential future application prospects of r-BS.</jats:p>