Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (3/3 displayed)

  • 2023Ground-State Structure of Quaternary Alloys (SiC)1−x (AlN)x and (SiC)1−x (GaN)xcitations
  • 2022First-principles insights into thermoelectric properties of topological nontrivial semimetal LiAuTe material4citations
  • 2021Structural, Electronic, Magnetic Properties and Elastic Anisotropy of New Ferromagnetic Cu<sub>2</sub>CrZ (Z=Si and Ge) Full Heusler Alloyscitations

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Zaoui, Ali
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Co-Authors (by relevance)

  • Zaoui, Ali
  • Ferhat, Mohamed
  • Cherifi, Fatiha
  • Meghoufel, Zahira Faiza
  • Kara, Ilham
  • Ferhat, M.
  • Hiadsi, S.
  • Negadi, K.
  • Mazouz, H. M. A.
  • Halis, Ladjel
  • Baghdad, R.
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article

Ground-State Structure of Quaternary Alloys (SiC)1−x (AlN)x and (SiC)1−x (GaN)x

  • Menad, Abdelkader
  • Zaoui, Ali
  • Ferhat, Mohamed
Abstract

International audience ; Despite III-nitride and silicon carbide being the materials of choice for a wide range of applications, theoretical studies on their quaternary alloys are limited. Here, we report a systematic computational study on the electronic structural properties of (SiC)x (AlN)1−x and (SiC)x (AlN)1−x quaternary alloys, based on state-of-the-art first-principles evolutionary algorithms. Trigonal (SiCAlN, space group P3m1) and orthorhombic (SiCGaN, space group Pmn21) crystal phases were as predicted for x = 0.5. SiCAlN showed relatively weak thermodynamic instability, while that of SiCGaN was slightly elevated, rendering them both dynamically and mechanically stable at ambient pressure. Our calculations revealed that the Pm31 crystal has high elastic constants, (C11~458 GPa and C33~447 GPa), a large bulk modulus (B0~210 GPa), and large Young’s modulus (E~364 GPa), and our results suggest that SiCAlN is potentially a hard material, with a Vickers hardness of 21 GPa. Accurate electronic structures of SiCAlN and SiCGaN were calculated using the Tran–Blaha modified Becke–Johnson semi-local exchange potential. Specifically, we found evidence that SiCGaN has a very wide direct bandgap of 3.80 eV, while that of SiCAlN was indirect at 4.6 eV. Finally, for the quaternary alloys, a relatively large optical bandgap bowing of ~3 eV was found for SiCGaN, and a strong optical bandgap bowing of 0.9 eV was found for SiCAlN.

Topics
  • impedance spectroscopy
  • phase
  • nitride
  • carbide
  • hardness
  • Silicon
  • space group
  • bulk modulus