• Tas, Niels
• Abelmann, Leon
• Berenschot, Erwin J. W.
• Elwenspoek, Miko

Abstract

The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.

Topics

• impedance spectroscopy
• single crystal
• anisotropic
• Silicon
• etching
• self-assembly
• lithography