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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tas, Niels
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Residual Stress Analysis of Thin Film Materials for Fabricating Suspended Low Stress Si3N4 Waveguides on Sapphire
- 2022Fabrication of microstructures in the bulk and on the surface of sapphire by anisotropic selective wet etching of laser-affected volumescitations
- 2022Integration of Topological Insulator Josephson Junctions in Superconducting Qubit Circuitscitations
- 2019Selective area growth and stencil lithography for in situ fabricated quantum devicescitations
- 2018Conformal Electroless Nickel Plating on Silicon Wafers, Convex & Concave Pyramids, and Ultralong Nanowires.
- 2018Conformal Electroless Nickel Plating on Silicon Wafers, Convex and Concave Pyramids, and Ultralong Nanowirescitations
- 2010Self-assembled three-dimensional non-volatile memoriescitations
Places of action
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article
Self-assembled three-dimensional non-volatile memories
Abstract
The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.