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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Leiviskä, Oskari
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Surface passivation of Ge by atomic layer deposited SiO2 ; Germaniumin pintapassivointi atomikerroskasvatetulla piioksidilla
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2024(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
- 2023Surface passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayercitations
- 2023Comparison of SiNx-based Surface Passivation Between Germanium and Siliconcitations
- 2023Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germaniumcitations
- 2023Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditionscitations
- 2023Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditionscitations
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article
Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditions
Abstract
<p>Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl<sub>4</sub>), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are suited to similar deposition temperatures (150 °C). Post-deposition annealing plays a major role in optimising the titanium oxide (TiO<sub>x</sub>) film passivation properties, improving minority carrier lifetime (τ<sub>eff</sub>) by more than 200 µs. Aluminium oxide deposited together with titanium oxide (AlO<sub>y</sub>/TiO<sub>x</sub>) reduced the sheet resistance by 40% compared with pure TiO<sub>x</sub>. It was also revealed that the passivation quality of the (AlO<sub>y</sub>/TiO<sub>x</sub>) stack depends on the precursor and ratio of AlO<sub>y</sub> to TiO<sub>x</sub> deposition cycles.</p>