| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sawicki, Maciej
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2025Electric-field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic couplingcitations
- 2024Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
- 2024Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
- 2024Spin Hall magnetoresistance in Pt/(Ga,Mn)N devicescitations
- 2023Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistancecitations
- 2023Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layerscitations
- 2023Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layerscitations
- 2019Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
- 2018Nematicity of correlated systems driven by anisotropic chemical phase separationcitations
- 2017Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
- 2013Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN
- 2012GaMnN epitaxial films with high magnetization
- 2012Manipulating Mn-Mg-k cation complexes to control the charge- and spin-state of Mn in GaNcitations
- 2011Structural and paramagnetic properties of dilute Ga1-xMnxN
- 2010Structural and paramagnetic properties of dilute Ga1-xMnxNcitations
- 2010Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAscitations
- 2010Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)Ascitations
- 2009Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As
- 2007Paramagnetic GaN : Fe and ferromagnetic (Ga,Fe)N: The relationship between structural, electronic, and magnetic propertiescitations
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article
Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance
Abstract
The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a GaAs substrate under a compressive misfit strain. An addition of a small atomic fraction of 1% Bi atoms, substituting As atoms in the layer, predominantly enhances the spin–orbit coupling strength in its valence band. The presence of bismuth results in a small decrease in the ferromagnetic Curie temperature and a distinct increase in the coercive fields. On the other hand, the Bi incorporation into the layer strongly enhances the magnitude of negative magnetoresistance without affecting the hole concentration in the layer. The negative magnetoresistance is interpreted in terms of the suppression of weak localization in a magnetic field. Application of the weak-localization theory for two-dimensional ferromagnets by Dugaev et al. to the experimental magnetoresistance results indicates that the decrease in spin–orbit scattering length accounts for the enhanced magnetoresistance in (Ga,Mn)(Bi,As).