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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Asadchikov, Victor E.
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article
Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth
Abstract
<jats:p>The synthesis of graphene by the graphitization of SiC surface has been driven by a need to develop a way to produce graphene in large quantities. With the increased use of thermal treatments of commercial SiC substrates, a comprehension of the surface restructuring due to the formation of a terrace-stepped nanorelief is becoming a pressing challenge. The aim of this paper is to evaluate the utility of X-ray reflectometry and grazing-incidence off-specular scattering for a non-destructive estimate of depth-graded and lateral inhomogeneities on SiC wafers annealed in a vacuum at a temperature of 1400–1500 °C. It is shown that the grazing-incidence X-ray method is a powerful tool for the assessment of statistical parameters, such as effective roughness height, average terrace period and dispersion. Moreover, these methods are advantageous to local probe techniques because a broad range of spatial frequencies allows for faster inspection of the whole surface area. We have found that power spectral density functions and in-depth density profiles manifest themselves differently between the probing directions along and across a terrace edge. Finally, the X-ray scattering data demonstrate quantitative agreement with the results of atomic force microscopy.</jats:p>