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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ritslaid, Peeter
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Publications (7/7 displayed)
- 2024Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Filmscitations
- 2023Ag Sputter-Deposited on MnO2-Carbon Nanotube Nanocomposites as Electrocatalysts for Oxygen Reduction Reaction in Alkaline Mediacitations
- 2022Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Depositioncitations
- 2022Structure and electrical behavior of hafnium-praseodymium oxide thin films Grown by atomic layer depositioncitations
- 2021Optical and mechanical properties of nanolaminates of zirconium and hafnium oxides grown by atomic layer depositioncitations
- 2018Atomic layer deposition and properties of ZrO2/Fe2O3 thin filmscitations
- 2014Atomic layer deposition of Zr<scp>O</scp><sub>2</sub> for graphene‐based multilayer structures: <i>In situ</i> and <i>ex situ</i> characterization of growth processcitations
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article
Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition
Abstract
<jats:p>Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO2 films. The HfO2 reference films crystallized in the stable monoclinic phase of HfO2. Mixing HfO2 and PrOx resulted in the growth of nanocrystalline metastable tetragonal HfO2. The highest relative permittivities reaching 37–40 were measured for the films with tetragonal structures that were grown using HfO2:PrOx cycle ratio of 5:1 and possessed Pr/(Pr + Hf) atomic ratios of 0.09–0.10. All the HfO2:PrOx films exhibited resistive switching behavior. Lower commutation voltages and current values, promising in terms of reduced power consumption, were achieved for the films grown with HfO2:PrOx cycle ratios of 3:1 and 2:1 and showing Pr/(Pr + Hf) atomic ratios of 0.16–0.23. Differently from the undoped HfO2 films, the Pr-doped films showed low variability of resistance state currents and stable endurance behavior, extending over 104 switching cycles.</jats:p>